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  Huang Mingzhang: Emerging compound semiconductors such as SiC and GaN will be strategic materials for the electric vehicle industry chain   Huang Mingzhang, senior analyst and deputy director of DIGITIMES, pointed out that although China and Europe are still the main markets for electric vehicles, the penetration rate will increase year by year. Starting from 2021, electric vehicles will account for an increasing proportion of global auto sales. If hybrid vehicles (HEV) are not included, the proportion of sales in 2025 will exceed 20%. As the penetration rate of electric vehicles (EV) increases, in addition to driving the growth of the electric vehicle market, it will also drive the growth of compound semiconductor markets such as silicon carbide (SiC) and gallium nitride (GaN). It is estimated that by 2026, the market for SiC power semiconductors will exceed US$3 billion, of which the proportion used in automotive applications, including inverters, OBCs, DC/DC converters, fast charging and other systems/devices, accounts for about one-third of two. China, Japan, the United States and other countries are increasingly investing in next-generation compound semiconductors   Governments of various countries attach great importance to the development of next-generation compound semiconductors. Huang Mingzhang mentioned that taking China as an example, it will enter the 14th five-year plan from 2021, and silicon carbide (SiC), gallium nitride (GaN) and other wide-ranging Gap semiconductors are the key areas of development, and a positive attitude has been adopted in third-generation semiconductors. In 2020, the investment in SiC alone will reach 55 billion yuan. Japan's "2050 Carbon Neutral Green Growth Strategy" not only mentions next-generation green power semiconductors, but also has a "Semiconductor Digital Industry Strategy" plan, including: Inverters that adopt next-generation power semiconductors in 2030 have a conversion loss that is less than At present, it has been reduced by more than 50%; in addition, the defect density of 8-inch SiC wafers in 2030 will be reduced by more than 90% compared with the current level; the cost of SiC components mass-produced in 2030 is equivalent to that of Si components with the same power/voltage resistance. Therefore, before 2025, these ultra-high-efficiency next-generation power semiconductors (SiC, GaN, and Ga2O3) will be researched and developed, and relevant technology demonstration, assembly, and advanced system integration will be carried out for specific applications such as wireless power transmission. This project will also cooperate with their "next-generation battery/next-generation motor development" project. On the other hand, in the United States, there is an organization "Power America" ​​supported by the US Department of Energy, which currently has more than 60 members. Through regular forum activities, the organization combines industry and academic research circles to propose a blueprint for the development of wide-bandgap power semiconductors and seek funding from funds. In the UK, the UK Research and Innovation Agency (UKRI) promotes the "SOCRATES project" (SOCRATES project), which aims to establish a supply chain for high-power GaN and SiC trench components. The South Korean government puts forward the idea of ​​the government in the development and productivity of next-generation power semiconductor technology.  

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